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| LAB MECHANICAL DATA Dimensions in mm 6.40 (0.252) 6.78 (0.267) 5.21 (0.205) 5.46 (0.215) SEME BUL68B 2.18 (0.086) 2.44 (0.096) 0.84 (0.033) 0.94 (0.037) ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR Designed for use in electronic ballast applications * * * * SEMEFAB DESIGNED AND DIFFUSED DIE HIGH VOLTAGE FAST SWITCHING HIGH ENERGY RATING 1.09 (0.043) 1.30 (0.051) 5.97 (0.235) 6.22 (0.245) 1 2 3 0.76 (0.030) 1.14 (0.045) 0.64 (0.025) 0.89 (0.035) 8.89 (0.350) 9.78 (0.385) 2.31 (0.091) Typ. 2.31 (0.091) Typ. 0.46 (0.018) 0.61 (0.024) FEATURES * Multi-base for efficient energy distribution across the chip resulting in significantly improved switching and energy ratings across full temperature range. Pin 3 - Emitter 4.60 (0.181) Typ. 1.04 (0.041) 1.14 (0.045) I-PAK(TO251) Pin 1 - Base Pin 2 - Collector * Ion implant and high accuracy masking for tight control of characteristics from batch to batch. * Triple Guard Rings for improved control of high voltages. ABSOLUTE MAXIMUM RATINGS (Tcase = 25C unless otherwise stated) VCBO VCEO VEBO IC IC(PK) IB Ptot Tstg Semelab plc. Collector - Base Voltage(IE=0) Collector - Emitter Voltage (IB = 0) Emitter - Base Voltage (IC = 0) Continuous Collector Current Peak Collector Current Base Current Total Dissipation at Tcase = 25C Operating and Storage Temperature Range Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. 200V 100V 10V 12A 17A 5A 20W -55 to +150C Prelim. 2/97 LAB ELECTRICAL CHARACTERISTICS (Tcase = 25C unless otherwise stated) Parameter VCEO(sus) V(BR)CBO V(BR)EBO ICBO ICEO IEBO SEME BUL68B Test Conditions Min. 100 250 10 Typ. Max. Unit ELECTRICAL CHARACTERISTICS Collector - Emitter Sustaining Voltage IC = 10mA Collector - Base Breakdown Voltage Emitter - Base Breakdown Voltage Collector - Base Cut-Off Current Collector - Emitter Cut-Off Current Emitter Cut-Off Current IC = 1mA IE = 1mA VCB = 250V TC = 125C IB = 0 VEB = 9V IC = 0 IC = 0.3A IC = 3A IC = 5A IC = 1A TC = 125C VCE = 4V VCE = 4V VCE = 1V TC = 125C IB = 0.1A IB = 0.3A IB = 0.6A IB = 0.3A IB = 0.6A VCE = 4V f = 1MHz VCE = 90V V 10 100 100 10 100 A A A 30 25 8 80 60 -- hFE* DC Current Gain 0.2 0.6 1.5 1.1 1.4 20 44 V V VCE(sat)* Collector - Emitter Saturation Voltage IC = 3A IC = 6A IC = 3A IC = 6A IC = 0.2A VCB = 10V VBE(sat)* Base - Emitter Saturation Voltage DYNAMIC CHARACTERISTICS Transition Frequency Output Capacitance ft Cob MHz pF * Pulse test tp = 300s , < 2% Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. Prelim. 2/97 |
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